The main applications are in variable-, drives, and fast AC disconnect switches. Multiple IGCTs can be connected in series or in parallel for higher power applications.
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Integrated gate-commutated thyristors (IGCT) All Hitachi Energy IGCTs (Integrated Gate-Commutated Thyristors) are press-pack devices. They are pressed with a relatively high force onto heat-sinks which also serve as electrical contacts to the power terminals. The IGCT's turn-on/off control unit is an integral element of the component.
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The device's control power consumption typically ranges from 10 - 100 W. The IGCT is optimized for low conduction losses. Its typical turn-on/off switching frequency is in the range of 500 hertz. However, in contrast to the GTO, the upper switching frequency is only limited by operating thermal losses and the system's ability to remove this heat.
An IGCT is a special type of thyristor. It is made of the integration of the gate unit with the gate-commutated thyristor (GCT) wafer device. The close integration of the gate unit with the wafer device ensures fast commutation of the conduction current from the cathode to the gate. The wafer device is similar to a gate turn-off thyristor (GTO).